基于简单循环架构的高度可集成的模拟储存电路
Yuki Abe1, Kazuki Nakada2, Naruki Hagiwara1
1Graduate School of Information Science and Technology, Hokkaido University, Kita 14, Nishi 9, Kita-ku, Sapporo, Hokkaido, 0600814, Japan.
Scientific reports
|May 14, 2024
概括
我们开发了一种用于人工智能 (AI) 加速的新型模拟电路储存器. 这种高度可集成的物理储库证明了边缘AI计算应用的高性能.
科学领域:
- 物理水库计算计算物理水库.
- 人工智能硬件加速 硬件加速
- 模拟电路的设计设计.
背景情况:
- 物理储库计算利用非线性物理系统进行AI计算.
- 对高度可集成的物理储库的需求正在增加,特别是对边缘AI的需求.
- 在实现具有高性能和可集成性的实际物理储库方面仍然存在挑战.
研究的目的:
- 介绍一款具有简单循环架构的新型模拟电路容器.
- 为了证明其适用于补充金属氧化物半导体 (CMOS) 芯片集成的适用性.
- 为了评估其实际AI应用的性能.
主要方法:
- 设计并实施了一个具有循环架构的模拟电路储存器.
- 利用硬件原型和模拟进行评估.
- 使用合成和现实世界数据集进行基准测试.
主要成果:
- 开发的模拟电路储存器实现了高预测性能.
- 证明了足够的内存容量用于实际应用.
- 展示了与CMOS芯片集成的兼容性.
结论:
- 拟议的模拟电路容器为高性能,可集成的AI加速器提供了一个有希望的解决方案.
- 这种方法解决了对高效边缘人工智能计算硬件的需求.
- 预计将在集成人工智能加速方面进一步应用.
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