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相关概念视频

MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

328
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
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π Electron Effects on Chemical Shift: Overview01:27

π Electron Effects on Chemical Shift: Overview

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An applied magnetic field causes loosely bound π-electrons in organic molecules to circulate, producing a local or induced diamagnetic field over a large spatial volume. As the molecules tumble in solution, the field generated by π-electrons in spherical substituents results in a zero net field. However, the net field generated by π-electrons in non-spherical substituents is not zero. The effect of this induced field depends on the orientation of the molecule with respect to B0,...
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Dielectric Polarization in a Capacitor01:31

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The presence of a dielectric medium in a capacitor not only changes the voltage and capacitance but also affects the electric field. In general, dielectrics can be of two types: polar and nonpolar. In a polar dielectric, the positive and negative charges in the molecules are separated by a distance and hence have a permanent dipole moment. In contrast, no such charge separation exists in a nonpolar dielectric, however the nonpolar molecules get polarized in the presence of an external electric...
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Potential Due to a Polarized Object01:29

Potential Due to a Polarized Object

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A neutral atom consists of a positively charged nucleus surrounded by a negatively charged electron cloud. When placed in an external electric field, the external electric force pulls the electrons and nucleus apart, opposite to the intrinsic attraction between the nucleus and the electrons. The opposing forces balance each other with a slight shift between the center of masses of the nucleus and the electron cloud, resulting in a polarized atom. On the other hand, a few molecules, like water,...
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相关实验视频

Updated: Jun 26, 2025

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
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基于石墨烯的多通道极化操纵用于加密通信.

Parsa Farzin1, Mohammad Javad Hajiahmadi2, Mohammad Soleimani1

  • 1School of Electrical Engineering, Iran University of Science and Technology, Tehran, 1684613114, Iran.

Scientific reports
|May 15, 2024
PubMed
概括

这项研究引入了一个可重编程的超表面,用于安全的太赫兹 (THz) 通信. 它使用极化调制实现实时,完全安全的信息加密,防止数据泄露.

科学领域:

  • 先进的信息科学 信息科学
  • 地表表面技术的技术.
  • 基于波的密码学 基于波的密码学

背景情况:

  • 超表面对于安全的加密平台至关重要,但现有的多通道加密面临信息泄露问题.
  • 可重新编程的超表面为信息科学中增强安全提供了潜在的解决方案.

研究的目的:

  • 开发一种可重编程的新型超表面,用于在太赫兹 (THz) 频谱中的极化调制.
  • 建立一个完全安全的通讯协议,以实时加密信息,使用此元表面.

主要方法:

  • 使用可重编程的超表面,能够任意极化和实时振幅调制.
  • 实现了用于信息加密的双随机阶段加密 (DRPE) 算法.
  • 采用由偏差条件控制的石墨烯纳米带,通过不同的极化通道传输加密数据.

主要成果:

  • 证明了线性偏振反射波的任意定制和实时振幅调制.
  • 在受限访问的THz频谱中实现了实时信息加密.
  • 模拟结果证实了极化操纵对安全隐藏图像的有效性.

结论:

  • 拟议的超表面技术为安全的THz通信和数据存储提供了强大的方法.

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  • 这种方法为安全加密,成像和隐藏数据的应用提供了新的机会.