您也可能阅读
通过共同作者、期刊和引用图与本文相关的文章。
Qiuhong Yu1,2, Rui Ge1,3, Juan Wen1
1Institute of Nanoscience and Nanotechnology, School of Materials and Energy, Lanzhou University, Lanzhou, Gansu, China.
研究人员开发了一种方法,利用电脉冲可逆调整半导体设备中的压力电子效应. 这一突破允许精确控制接口障碍,提高电子和微/纳米电机系统的性能.
10:39Fabrication and Characterization of Thickness Mode Piezoelectric Devices for Atomization and Acoustofluidics
Published on: August 5, 2020
07:44Characterization of Full Set Material Constants and Their Temperature Dependence for Piezoelectric Materials Using Resonant Ultrasound Spectroscopy
Published on: April 27, 2016
科学领域:
背景情况:
研究的目的:
主要方法:
主要成果:
结论: