激光图案Schottky二极管与ALD培养的TiO2介层之间的电气性能
Elanur Dikicioǧlu1, M Burcu Balı2, Semran Saǧlam2
1Vocational School of Health Services, Yüksek İhtisas University, 06291 Ankara, Turkey.
ACS omega
|May 20, 2024
概括
在p型上对二氧化 (TiO2) 进行激光模拟,提高了Schottky屏障二极管的性能. 这种技术提高了屏障高度,并降低了更好的电子设备的理想性因素.
科学领域:
- 材料科学 材料科学 材料科学
- 半导体物理 半导体物理
- 设备工程 设备工程
背景情况:
- 异质连接对于半导体设备至关重要,金属氧化物如二氧化 (TiO2) 具有独特的电子和光电子特性.
- 二氧化物表现出理想的特性,包括大带间隙,高电容性,稳定性和低泄漏电流密度.
- 肖特基屏障二极管 (SBD) 是基本的半导体设备,在这些设备中,异质连接的形成会显著影响性能.
研究的目的:
- 为了研究金属绝缘体半导体 (MIS) 类型的基于TiO2的SBD的电气性能.
- 为了评估激光诱导周期性表面结构 (LIPSS) 图案在二氧化薄膜上的影响,用于二极管制造.
- 为了比较激光图案 (LP) 和非激光图案 (非LP) TiO2/p型Si二极管的性能.
主要方法:
- 使用原子层沉积 (ALD) 在p型上制造TiO2薄膜.
- 使用激光诱导周期性表面结构 (LIPSS) 技术,对TiO2层进行部分图案设计.
- 在黑暗中测量300K的电流-电压 (I-V) 特性,适用于LP和非LP二极管.
- 使用经典热电辐射 (TE) 理论和功能的二极管参数 (理想系数,序列电阻,屏障高度) 的分析.
主要成果:
- 在p型上对TiO2进行激光模拟,从而改善了二极管的特性.
- 理想系数 (n) 从非LP的4.10 (TE) /3.68 (Cheung) 降低到LP二极管的改进值.
- 屏障高度 (Φb) 从非LP的0.68 eV (TE) /0.69 eV (Cheung) 增加到LP二极管的改进值.
- 激光图案导致基于TiO2的SBD的性能显著提高.
结论:
- 激光图案是改进基于TiO2的异质连接器件的电性能的一种有效技术.
- 该研究表明,激光图案二极管的屏障高度提高和理想性因子降低.
- 这些发现为制造和优化基于TiO2的先进电子设备提供了宝贵的见解.
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