应变和电子兴奋剂诱导的平面内旋转方向在室温下在单层CrTe2中
Donghui Wang1, Xin Wang1, Bingxi Hu1
1College of Chemistry, Beijing Normal University, Beijing 100875, P. R. China.
ACS applied materials & interfaces
|May 24, 2024
概括
单层1T-CrTe2表现出室温 (RT) 以上的铁磁性,经过实验证实. 长轴应变和石墨烯相互作用诱导平面内磁化,为二维自旋电子设备铺平了道路.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 纳米技术纳米技术
背景情况:
- 室温 (RT) 铁磁铁对于平面自旋电子学至关重要.
- 超薄CrTe2是一种2D铁磁体候选物,其基里温度高于300K.
- 单层CrTe2的磁性对环境因素很敏感,其顺序被争论,RT铁磁性未经实验证实.
研究的目的:
- 在室温 (RT) 以上的单层1T-CrTe2中实验证实铁磁秩序.
- 调查表轴应变和基质相互作用对单层CrTe2的磁性特性的作用.
- 阐明在石墨烯基底上单层CrTe2的磁性排序和电子结构.
主要方法:
- 在双层石墨烯上制造单层1T-CrTe2,使用分子束表.
- 使用超导量子干扰装置 (SQUID) 测量的磁性表征.
- 使用密度函数理论 (DFT) 计算进行理论分析.
- 用扫描道显微镜 (STM) 在现场进行结构性表征.
主要成果:
- 在300K以上的单层1T-CrTe2中实验性地证明铁磁性与内平面磁化.
- DFT计算显示,表轴应变 (1.6%的Cr-Cr距离增加) 和改变的Cr-Te-Cr角 (约. 1.6°) 可以增强铁磁性质.
- 基板相互作用诱导磁矩从外平面向内平面过渡,电子兴奋剂超过1.5e/u.c.
- 结合的DFT和STM证实了石墨烯上单层CrTe2配置.
结论:
- 第一个单层CrTe2的实验证据显示RT.以上的铁磁性.
- 长轴应变和石墨烯相互作用是控制2D CrTe2磁性特性的关键因素.
- 这项工作为开发基于CrTe2的自旋电子设备奠定了基础.
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