CeNbO4+δ

Yafei Liu1,2, Ruifeng Wu1,2, Hao Sun1

  • 1State Key Laboratory of Functional Materials and Devices for Special Environmental Conditions, Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry of CAS, Urumqi 830011, China.

概括

高率策略增强了氧化 (CeNbO4+δ) 陶用于高温传感器. 这一突破实现了超高的稳定性和精度,克服了热敏陶开发的关键限制.