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Updated: Jun 25, 2025

Radio Frequency Magnetron Sputtering of GdBa2Cu3O7âˆ'ÃŽ ´/ La0.67Sr0.33MnO3 Quasi-bilayer Films on SrTiO3 STO Single-crystal Substrates
06:49

Radio Frequency Magnetron Sputtering of GdBa2Cu3O7âˆ'ÃŽ ´/ La0.67Sr0.33MnO3 Quasi-bilayer Films on SrTiO3 STO Single-crystal Substrates

Published on: April 12, 2019

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在Ga-Doped HfO2铁电薄膜中具有低强制场的域切换特征

Yu-Chun Li1, Teng Huang1, Xiao-Xi Li1

  • 1State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, China.

Nano letters
|May 24, 2024
PubMed
概括

在氧化哈夫 (Ga-HfO) 薄膜中的兴奋剂使可调节的强制场能够用于先进的铁电记忆. 这项研究优化了Ga-HfO2用于高速,低压设备操作.

关键词:
在Ga中添加HfO2的HfO2.强制场是一种强制场.域名域名域名域名域名域名铁电机电机电机电机电机电机偏振切换 切换 偏振切换

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