对于5nm节点及以后的CMOS缩放:设备,过程和技术.
Henry H Radamson1, Yuanhao Miao1, Ziwei Zhou1
1Research and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China.
Nanomaterials (Basel, Switzerland)
|May 24, 2024
概括
摩尔定律即将结束,推动3D晶体管的创新,如通道周围 (GAA) 和完全耗尽的在绝缘体 (FDSOI) 设计. 这些先进的晶体管架构旨在克服扩展限制,并使未来的低功耗电子产品成为可能.
科学领域:
- 半导体设备物理 半导体设备物理
- 材料科学 材料科学 材料科学
- 电气工程 电气工程
背景情况:
- 摩尔定律和半导体国际技术路线图 (ITRS) 正在接近传统的补充性金属氧化物半导体 (CMOS) 架构的极限.
- 规模化的挑战,特别是短通道效应 (SCE),阻碍了晶体管的进一步小型化.
- 对于先进的晶体管设计的需求对于电子技术的持续进步至关重要.
研究的目的:
- 审查超越当前CMOS技术的新兴晶体管设计.
- 探索缩放到5nm技术节点以外的解决方案.
- 讨论电子和光子学,模拟方法和处理挑战的集成.
主要方法:
- 关于先进晶体管架构的当前文献的审查.
- 对超越SCE的通道全方位 (GAA) 晶体管的分析.
- 对用于低功耗应用的完全耗尽的在绝缘体 (FDSOI) 和道场效应晶体管 (TFET) 的讨论.
- 探索模拟技术和计量学用于设备表征.
主要成果:
- 门全方位 (GAA) 晶体管通过减轻短通道效应,显示出超出5纳米的扩展潜力.
- 完全耗尽的SOI (FDSOI) 和道场效应晶体管 (TFET) 为低功耗电子提供了潜力.
- 创新的加工和计量技术对于制造和表征下一代设备至关重要.
- 电子和光子学的整合是未来发展的关键领域.
结论:
- 摩尔定律的终结需要探索新的晶体管设计,如GAA,FDSOI和TFET.
- 先进的设备架构对于克服扩展限制和实现未来电子系统至关重要.
- 成功实施需要解决使用先进计量学处理,设计和表征设备的重大挑战.
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