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石墨/h-BN 范德瓦尔斯的异构结构作为HgTe量子井的门

Xianhu Liang^1,2, Saquib Shamim^1,2, Dongyun Chen^1,2

¹Physikalisches Institut (EP3), Universität Würzburg, 97074 Würzburg, Germany.

|May 24, 2024

概括

在HgTe设备上的六角化 (h-BN) /石墨门可以防止费米水平的变化,而不是HfO2门. 这一突破增强了对自旋电子和量子计算应用的拓绝缘体的控制.

科学领域:

凝聚物质物理学凝聚物质物理学
材料科学材料科学材料科学

背景情况:

二维拓绝缘器对于自旋电子学和量子计算至关重要.
将费尔米水平调整到电场的大带间隙中,对于观察异国情调现象至关重要.
六角化 (h-BN) 提供了一个平坦的,无电荷的表面,非常适合门介电.

研究的目的:

为了研究h-BN/石墨范德瓦尔斯异构结构作为基于HgTe异构的Hall bar设备的顶端门.
为了比较h-BN/石墨门与传统的h-BN/Ti/Au和HfO2/Ti/Au门的性能.
解决关闭的HgTe异构结构中显著载体密度转移的问题.

主要方法:

基于HgTe异构的Hall bar设备的制造.
集成h-BN/石墨范德瓦尔斯异构结构作为顶端门.
与使用h-BN/Ti/Au和HfO2/Ti/Au门的设备进行比较.
对电荷载体密度和电子流动性的分析.

主要成果:

带有h-BN/石墨门的设备没有显示电荷载体密度的变化.
HfO2/Ti/Au封闭器件显示了显著的n型载体密度增加.
与基于HfO2的设备相比,h-BN门式设备的电子移动性略高.
确定HgTe和石墨的工作功能是观察到的稳定性的关键因素.

结论:

h-BN/石墨范德瓦尔斯异构结构是HgTe设备的有效顶端门,防止不必要的载体密度转移.
已经证明了分层材料转移与湿蚀结构的兼容性.
这种方法提供了一种可行的策略,用于精确控制封闭的拓绝缘装置中的载体密度.

关键词:

石墨烯酸石墨是一种石墨.六角性的化.拓绝缘体的拓绝缘体是一个范德瓦尔斯异构结构的异构结构

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