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Updated: Jun 25, 2025

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
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The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

Published on: May 24, 2020

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对具有缺陷氧化物门的子值突触IGZO薄膜晶体管的电荷保留特性进行分析

Sungsik Lee1

  • 1Department of Electronics Engineering, Pusan National University, Pusan, 46241, Republic of Korea. sungsiklee@pusan.ac.kr.

Scientific reports
|May 24, 2024
PubMed
概括

这项研究分析了带有缺陷门氧化物的---氧化物 (IGZO) 薄膜晶体管 (TFT) 中的电荷保留. 整合缺陷增强了电子捕获,从而改善了低功耗突触应用的保留.

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