关于SiC MOSFET单一事件燃烧强化结构的研究
1Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi'an 710071, China.
Micromachines
|May 25, 2024
概括
这项研究使用结构增强增强了1200伏碳化物 (SiC) MOSFET的单一事件燃烧 (SEB) 阻力. 结合P+身体接触面积扩张和缓冲层,可以显著提高SEB值电压33%.
科学领域:
- 半导体设备物理学 半导体设备物理
- 动力电子产品的动力电子.
- 电子产品中的辐射效应.
背景情况:
- 1200V碳化 (SiC) MOSFET对于高功率应用至关重要.
- 由于重离子冲击,单一事件燃烧 (SEB) 构成可靠性风险.
- 现有的SiC MOSFET设计需要提高对恶劣环境的SEB抗性.
研究的目的:
- 为了研究 SEB 机制在一个新的 1200 V SiC MOSFET 中,具有分割门和嵌入式 Schottky 屏障二极管 (SBD).
- 开发和评估结构增强技术,以提高SEB的抵抗力.
- 分析SEB改进与设备性能之间的权衡.
主要方法:
- 使用Sentaurus TCAD模拟设备以建模SG-SBD-MOSFET结构.
- 在重离子辐射下分析单一事件效应 (SEE) 短暂电流和电场分布.
- 设计和单独/联合评估P+身体接触面积扩展和多层N型间隔缓冲层增强.
主要成果:
- 仅使用P+身体接触延伸,SEB值电压增加了16%.
- 仅使用多层N型间隔缓冲层,SEB值电压增加了29%.
- 联合增强将SEB门电压提高了33%,故障电压小幅降低,从1632.935V降至1403.135V.
结论:
- 拟议的增强结构有效地提高了1200VSiC MOSFET中的SEB电阻.
- 综合方法在SEB门电压方面提供了最显著的改善.
- 强化设备在降低电压边际的情况下保持可接受的性能.
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