8SiCBPD

Chengyuan Sun1,2,3, Yunfei Shang1, Zuotao Lei1

  • 1MIIT Key Laboratory of Critical Materials Technology for New Energy Conversion and Storage, School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin 150001, China.

概括

在碳化 (SiC) 晶体中降低基底平面脱位 (BPD) 密度对于应用至关重要. 这项研究优化了冷却,种子结合和材料,以显著降低4H-SiC单晶中的BPD密度.