无兴奋剂和兴奋剂二氧化薄膜的光学,电气,结构和热力学性能
Chuen-Lin Tien1,2, Chun-Yu Chiang2, Ching-Chiun Wang3
1Department of Electrical Engineering, Feng Chia University, Taichung 40724, Taiwan.
Materials (Basel, Switzerland)
|May 25, 2024
概括
制造了 wolfen-doped 二氧化 (VO2) 薄膜,显示了随着W-doping的增加而降低的透射率. 5% W-doped VO2 薄膜在55°C以上呈现出显著的光学变化.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 纳米技术纳米技术
背景情况:
- 二氧化瓦纳 (VO2) 是一种以其热色特性而闻名的材料.
- 薄膜VO2对于智能窗口和光学开关设备的应用至关重要.
- 探索 (W) 兴奋剂来调整VO2的特性.
研究的目的:
- 研究不同 (W) 兴奋剂度 (3-5%) 对二氧化瓦纳 (VO2) 薄膜特性的影响.
- 分析W-doped VO2的电气,光学,结构和热力学特性.
- 为了确定最佳的兴奋剂水平,以提高热色性能.
主要方法:
- 电子束蒸发与离子束辅助沉积 (IAD) 结合,用于薄膜制备.
- 在可见和红外范围内测量光谱透射率.
- 从30°C到100°C的温度依赖的光谱分析.
- 用X射线衍射 (XRD) 和扫描电子显微镜 (SEM) 来进行微观结构的表征.
主要成果:
- 增加W-兴奋剂含量降低了可见光透射率 (60.2%至53.9%) 并显著降低了红外透射率 (55.8%至15.4%).
- 随着W-doping的增加,残余应力下降,而表面粗度增加.
- 5% W-doped VO2 薄膜显示55°C以上的传导率变化最为显著,可见光传导率下降约11%.
结论:
- 兴奋剂有效调节VO2薄膜的光学特性.
- W-兴奋剂度会影响残余应力和表面形态.
- 5% W-doped VO2 薄膜在潜在的光学切换应用中显示出有希望的热色特性.
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