BiVO4光电极与NiV2O6反接触接口层,以改善孔扩散长度和光电化学水氧化活性
Tahir Naveed Jahangir1, Safwat Abdel-Azeim2, Tarek A Kandiel1,3
1Department of Chemistry, King Fahd University of Petroleum and Minerals (KFUPM), Dhahran 31261, Saudi Arabia.
ACS applied materials & interfaces
|May 27, 2024
概括
这项研究通过使用一种新的BiVO4光电极和NiV2O6接口层来改善孔扩散长度 (HDL) 来增强半导体太阳能电池. 用酸使表面被动化进一步提高性能,实现显著的光电流密度增加.
科学领域:
- 材料科学 材料科学 材料科学
- 电化学 电化学 电化学
- 可再生能源可再生能源是可再生能源.
背景情况:
- 半导体太阳能系统面临着短孔扩散长度 (HDL) 和高接口重组的挑战.
- 表面被动化和界面层是改善高清电流和电荷载体分离的关键策略.
研究的目的:
- 开发一种没有针孔的BiVO4光电极,配有NiV2O6反接触接口 (BCI) 层,以增强HDL和光电化学 (PEC) 活性.
- 为了解决使用表面被动化在水氧化中的前面表面重组限制.
主要方法:
- 使用NiV2O6BCI层制造BiVO4光电极.
- 使用Na2SO3电子捐赠者和强度调制光电流谱学 (IMPS) 的光电化学 (PEC) 研究.
- 用酸电催化剂进行表面被动化.
- 密度函数理论 (DFT) 模拟来分析接口属性.
主要成果:
- NiV2O6 BCI层使BiVO4.4的HDL增加了一倍.
- 前面表面的重组被确定为水氧化的一个限制因素.
- 酸被动化显著提高了PEC性能,实现了光电流密度的12倍增长 (4.8 mA cm-2在1.23 VRHE).
- DFT揭示了NiV2O6 / BiVO4接口的强大的内置电场,最大限度地减少了后面表面的重组.
结论:
- NiV2O6 BCI层有效地扩展HDL,并增强BiVO4光电极中的PEC活性.
- 用酸消极表面对于克服剩余的重组损失和最大限度地提高性能至关重要.
- 联合战略为基于半导体的高效太阳能转换提供了一个有希望的途径.
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