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Updated: May 5, 2026

In Depth Analyses of LEDs by a Combination of X-ray Computed Tomography CT and Light Microscopy LM Correlated with Scanning Electron Microscopy SEM
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高亮度微型LED的增强接触性能通过ITO/Al阳极堆和回火过程

Zeyang Meng1, Chaoyu Lu2, Guanghua Wang3,4,5

  • 1School of Materials and Energy, Yunnan University, Kunming, 650091, China.

Scientific reports
|May 27, 2024
PubMed
概括

在使用化 (GaN) 的微型发光二极管 (微型LED) 中优化阳极接触至关重要. 在500°C下在5分钟内对特定的电极结构进行火,显著提高了微型LED的性能,实现了高亮度和效率.

关键词:
阳极接触的接触方式是:电极结构设计电极结构设计微型LED是指微型LED.

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Biasing of P-N Junction01:16

Biasing of P-N Junction

The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
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