大场式旋转轨道扭矩和增强的磁化切换效率利用无形Mo
Xinran Wang1, Ao Meng1, Yuxuan Yao1
1Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China.
Nano letters
|May 28, 2024
概括
(Mo) 在SOT-MRAM设备中显示出有希望的旋转轨道扭矩 (SOT) 效率,使得高效的电流诱导磁化切换成为可能. 这项研究突出了Mo Mo的重点.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 这就是Spintronics.
背景情况:
- 旋转轨道扭矩磁性随机访问存储器 (SOT-MRAM) 提供高写入速度和低功耗.
- (Mo) 在基于CoFeB/MgO的MRAM细胞中被探索其增强垂直磁性异质性 (PMA) 的潜力.
- 尽管Mo的潜力很大,但其弱的自旋轨道合使其成为不太受欢迎的SOT材料.
研究的目的:
- 在Mo/CoFeB/MgO异构中实验研究旋转轨道扭矩效率.
- 为了评估Mo厚度和温度对SOT特性的影响.
- 用基于Mo的异构结构来演示电流诱导的磁化切换.
主要方法:
- 制造Mo/CoFeB/MgO异构的结构. 制造Mo/CoFeB/MgO异构的结构.
- 试验测量缓冲式 (ξDL) 和场式 (ξFL) 旋转轨道扭矩效率.
- SOT属性的温度依赖性表征.
- 评估电流诱导的磁化开关.
主要成果:
- 无形Mo表现出显著的SOT效率: = 0.015 ± 0.001 和 = 0.050 ± 0.001.
- 观察到一种类似于阻尼的高场SOT效率比率 (ξFL/ξDL>3).
- 有效的电流诱导磁化切换可以实现,其临界电流密度与伊 (Ir) 和 (W) 等重金属相美.
结论:
- 在SOT-MRAM中显示出作为SOT源材料的巨大潜力.
- 这些发现揭示了Mo作为垂直磁性异构 (PMA) 缓冲层的可行性.
- 这项研究为在先进的SOT-MRAM设备应用中利用Mo开辟了新的途径.
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