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Updated: May 13, 2026

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
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石墨MoS2的垂直异构结构用于气体传感

M Tripathi1, G Deokar2, J Casanova-Chafer3

  • 1Department of Physics and Astronomy, University of Sussex, Brighton BN1 9RH, UK. m.tripathi@sussex.ac.uk.

Nanoscale horizons
|May 29, 2024
PubMed
概括

这项研究介绍了一种新的2D材料传感器,使用二硫化 (MoS) 和石墨薄膜进行增强的气体检测. 混合结构在检测像NO2这样的污染物方面表现出卓越的灵敏度.

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相关概念视频

MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...