添加剂辅助的热水生长使得反硫化太阳能电池的缺陷被动化和空隙补救成为可能
Seunghwan Ji1, Yazi Wang1, Jiseon Hwang2
1Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, South Korea.
Small (Weinheim an der Bergstrasse, Germany)
|May 29, 2024
概括
胺硫化太阳能电池通过添加 thioacetamide 来被动硫空缺来提高效率. 这减少了重组,提高了功率转换,提高了性能.
科学领域:
- 材料科学 材料科学 材料科学
- 可再生能源可再生能源是可再生能源.
- 固态物理 固态物理
背景情况:
- 抗二硫化 (Sb2(S,Se) 3) 是一个有前途的光伏材料,具有调节性质,低毒性和稳定性.
- 由于深层次的缺陷限制了效率,Sb2(S,Se) 3太阳能电池的性能低于已有的薄膜技术.
- 硫空缺 (VS) 是具有低形成能量的关键缺陷,导致非辐射重组并阻碍设备性能.
研究的目的:
- 研究Sb2(S,Se) 3太阳能电池中深层缺陷的被动化.
- 为了提高Sb2(S,Se) 3薄膜太阳能电池的功率转换效率.
- 探索含硫添加剂在减轻缺陷中的作用.
主要方法:
- 在水热下沉积Sb2(S,Se) 3吸收层.
- 在前体溶液中将乙胺 (TA) 作为含硫的添加剂.
- 薄膜质量的表征,缺陷被动化和光伏性能.
主要成果:
- 乙胺有效地使Sb2中的深层硫空缺 (VS) 3.
- 添加TA可以抑制大空隙的形成,提高电影质量.
- Sb2(S,Se) 3太阳能电池实现了9.04%的功率转换效率,增强了开通电路电压和填充因子.
结论:
- 使用TA等硫添加剂消极化深层次的捐赠者样VS缺陷是改善Sb2(S,Se) 3太阳能电池的可行策略.
- 减少载体重组和改善膜形态有助于提高设备性能.
- 这项工作为推进基于Sb2(S,Se) 3的光伏技术提供了洞察力.
更多相关视频
09:19In Situ Monitoring of the Accelerated Performance Degradation of Solar Cells and Modules: A Case Study for CuIn,GaSe2 Solar Cells
Published on: October 3, 2018
8.4K
08:24Key Factors Affecting the Performance of Sb2S3-sensitized Solar Cells During an Sb2S3 Deposition via SbCl3-thiourea Complex Solution-processing
Published on: July 16, 2018
7.9K
相关概念视频
Formation of Complex Ions
A type of Lewis acid-base chemistry involves the formation of a complex ion (or a coordination complex) comprising a central atom, typically a transition metal cation, surrounded by ions or molecules called ligands. These ligands can be neutral molecules like H2O or NH3, or ions such as CN− or OH−. Often, the ligands act as Lewis bases, donating a pair of electrons to the central atom. These types of Lewis acid-base reactions are examples of a broad subdiscipline called coordination...
P-N junction
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
