无电场旋转轨道扭矩磁化切换在单相铁磁和旋转氧化物中
Yongjoo Jo1, Younji Kim1, Sanghyeon Kim1
1Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang 37673, Korea.
Nano letters
|May 29, 2024
概括
研究人员使用单相材料SrRuO3.3,在没有外部磁场的情况下实现了磁性内存切换. 这一突破为先进的旋转轨道设备提供了高旋转轨道扭矩效率和低功耗.
科学领域:
- 这就是Spintronics.
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
背景情况:
- 电流诱导的旋转轨道扭矩 (SOT) 对低功率磁性内存至关重要.
- 具有磁性和自旋霍尔效应的单相材料对于高效的SOT系统来说是有希望的.
- SrRuO3是一种单相铁磁和自旋霍尔氧化物.
研究的目的:
- 为了证明在SrRuO3.3中垂直磁化的无外部磁场切换.
- 为了在单层铁磁 SrRuO3.3 中实现净 SOT 性能.
- 通过物质操纵探索旋转轨道电子学的进步.
主要方法:
- 在SrRuO3.3的顶部和底部表面层中,局部格子的微妙变化.
- 保持SrRuO3散体的半均,单晶性质.
- 在表面层之间诱导不平衡的旋转霍尔效应.
主要成果:
- 在单层 SrRuO3.3 中实现垂直磁化的无场切换.
- 在单层SrRuO3中,由于不平衡的旋转霍尔效应,证明了SOT净性能.
- 在无现场条件下,SrRuO3在单层系统中表现出最高的SOT效率和最低的功耗.
结论:
- 通过人工操纵SrRuO3中的局部原子结构,可以实现高效的SOT.
- 这种方法为旋转轨道电子学的进步铺平了道路.
- 使用这种方法可以探索新的SOT材料.
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