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Updated: Jun 25, 2025

Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes

Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes

Published on: June 25, 2020

用石墨烯增强的紫外线-C LED

Johanna Meier¹, Hehe Zhang¹, Umut Kaya¹

¹Werkstoffe der Elektrotechnik and CENIDE, University of Duisburg-Essen, Bismarckstraße 81, 47057, Duisburg, Germany.

Advanced materials (Deerfield Beach, Fla.)

|May 29, 2024

概括

石墨烯集成增强紫外线-C发光二极管 (UV-C LED) 用于杀菌和净化水. 这一突破提高了翻转芯片和标准UV-C LED设计的效率.

科学领域:

半导体物理半导体物理
光电学是指光电子产品.
材料科学材料科学材料科学

背景情况:

紫外线-C发光二极管 (UV-C LED) 为消毒和净化水提供了无替代品.
当前的UV-CLED设计面临诸多挑战,包括翻转芯片配置中的工作功能不匹配,以及标准几何形状中缺乏透明的电流传播层,从而限制了效率.

研究的目的:

研究使用无转移石墨烯作为高效UV-CLED的启用材料.
为了证明石墨烯在翻转芯片和标准UV-C LED架构中的有效性.

主要方法:

石墨烯是直接在p-AlGaN层上生长的,使用了等离子体增强化学蒸汽沉积 (PECVD).
结合石墨烯的UV-CLED的性能在翻转芯片和标准设备几何学上都得到了评估.

主要成果:

在翻转芯片UV-CLED中,石墨烯作为接触间层,在8V时实现了9.5%的外部量子效率 (EQE) 和5.5%的壁插头效率 (WPE).
石墨烯与NiO_x相结合,使启动电压降低到5V以下.
在标准几何学中,石墨烯充当了电流传播层,使顶部发射设备具有2.1%的EQE和1.1%的WPE在8.7V.

结论:

关键词:

两维材料是二维材料.这里是AlGaNN.石墨烯是一种石墨烯.发光二极管是一种发光二极管.在UV-C中.

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无转移石墨烯是克服UV-CLED效率限制的可行解决方案.
石墨烯集成显著提高了UV-CLED在翻转芯片和标准配置的性能,为更广泛的应用铺平了道路.