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Updated: Jun 25, 2025

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
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具有新二极管结构的SEE-Tolerant模拟开关芯片的设计

Wei Huang1, HongXia Liu1, Qing Xu2

  • 1School of Microelectronics, Xidian University, Xi'an 710000, People's Republic of China.

Nanotechnology
|May 30, 2024
PubMed
概括

本研究引入了一种新的电路设计,以提高模拟开关的辐射耐受性. 一个新的二极管单元有效地减少了单次事件效应 (SEE),提高了设备在高辐射环境中的可靠性.

关键词:
模拟交换机芯片开关模拟交换机芯片开关过压保护单元的过压保护单元停电保护技术的保护技术辐射耐受性 辐射耐受性单一事件的燃烧情况.

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