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Updated: Aug 9, 2026

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

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可靠的晶圆尺度集成二维材料和金属电极与范德瓦尔斯接触

Xiaodong Zhang1,2,3, Chenxi Huang1,3,4, Zeyu Li1,2,3

  • 1International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, China.

Nature communications
|May 30, 2024
PubMed
概括

研究人员开发了一种使用高质量的范德瓦尔斯 (vdW) 接触器制造二维电子设备的新方法. 这种高效,可扩展的技术可以实现高密度集成和对先进电子设备的设备特性进行调整.

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相关概念视频

Imperfections in Crystal Structure: Stoichiometric Point Defects01:26

Imperfections in Crystal Structure: Stoichiometric Point Defects

Schottky defects arise when some lattice points in a crystal, such as those in NaCl, remain unoccupied, creating lattice vacancies without disturbing the overall electrical neutrality of the crystal. This defect is common in ionic crystals where the positive and negative ions are similar in size, as seen in sodium chloride and cesium chloride. The presence of Schottky defects enables the crystal to conduct electricity to a small extent through an ionic mechanism. Electric fields cause nearby...