相关实验视频

Updated: Jun 11, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
11:14

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Published on: May 28, 2016

13.8K

在多形状单层二硫化单层中确定和调查缺陷域

H Ağırcan1,2, D Convertino1, A Rossi1,3

  • 1Center for Nanotechnology Innovation @NEST, Istituto Italiano di Tecnologia Piazza San Silvestro 12 I-56127 Pisa Italy stiven.forti@iit.it.

Nanoscale advances
|May 31, 2024
PubMed
概括

控制单层二硫化物 (WS2) 的缺陷是利用其电子和光学性能的关键. 这项研究揭示了生长条件如何影响缺陷类型,从而为先进应用提供量身定制的材料特性.

更多相关视频

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication08:50

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Published on: November 28, 2017

9.2K
Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon06:57

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

2.2K

相关概念视频

Imperfections in Crystal Structure: Point, Line and Plane Defects01:25

Imperfections in Crystal Structure: Point, Line and Plane Defects

A perfect crystal, in theory, has a uniform structure with the same unit cell and lattice points throughout. However, any deviation from this periodic arrangement is known as an imperfection or defect. These defects can be categorized into three types: point, line, and plane defects.Point defects occur when there is a deviation from the ideal due to missing atoms, displaced atoms, or additional atoms. These imperfections might occur due to imperfect packing during crystallization or because of...