室温 格子 GeSn合金的热导率
Omar Concepción1, Jhonny Tiscareño-Ramírez1, Ada Angela Chimienti2
1Peter Gruenberg Institute 9 (PGI-9) and JARA-Fundamentals of Future Information Technologies, Forschungszentrum Juelich, Juelich 52428, Germany.
概括
-锡 (GeSn) 合金的导热率显著降低,使绿色计算和物联网设备能够高效地收集热电能. 这些CMOS兼容材料为集成电源解决方案提供了潜力.
科学领域:
- 材料科学 材料科学 材料科学
- 固态物理 固态物理
- 半导体技术 半导体技术
背景情况:
- 高效的能源采集对于可持续的绿色计算和超低功耗物联网 (IoT) 应用至关重要.
- 热电能收获器需要在芯片和体温下运行的CMOS兼容材料.
- 像-锡 (GeSn) 合金这样的IV组半导体是这些应用的有希望的候选者.
研究的目的:
- 研究热电应用的GeSn合金的晶格导热率 (κ).
- 评估n型和p型GeSn表轴层的热电功率 (ZT) 值.
- 评估GeSn合金在CMOS平台上的单体集成的潜力.
主要方法:
- 在Si晶片上使用化学蒸汽沉积,高达14%的Sn含量的GeSn层的长轴生长.
- 通过差分3ω方法对网格导热率 (κ) 的电测量.
- 对电荷传输特性进行数值估计,以确定热电功率 (ZT) 的数字.
主要成果:
- 测量了格子导热率 (κ) 的急剧下降,从Ge的55W/m·K降至Ge合金的4W/m·K. 测量了0.88Sn0.12合金.
- 发现热导电性对于应力松合金的层厚度是独立的.
- 证明了GeSn合金在20°C-100°C范围内的高潜力,以实现与SiGe合金相比的能量收获.
结论:
- 单晶GeSn合金表现出优良的热电特性,适合用于能源采集.
- 基于Si的半导体在温度范围有限的热电应用中,GeSn合金提供了一个CMOS兼容的解决方案.
- 这项研究为CMOS平台上的单立体集成热电学开辟了可能性.
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