室温铁电和电调节的贝里曲率二极管在III-V单层中的III-V单层
Ateeb Naseer1, Achintya Priydarshi1, Pritam Ghosh2
1Department of Electrical Engineering, Indian Institute of Technology, Kanpur, Kanpur 208016, India.
在由III组和V组元素制成的新二维材料中发现了室温铁电. 这些材料显示出强烈的两极分化,并有可能用于先进的存储器和电子设备.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 固态化学 固态化学
背景情况:
- 二维 (2D) 铁电材料对于开发下一代紧型内存和灵活的电子设备至关重要.
- 现有的二维铁电器经常在性能或操作条件上面临限制.
研究的目的:
- 为了预测和描述室温铁电在新型AB型2D单层中.
- 探索这些材料在先进电子应用中的潜力.
主要方法:
- 使用第一原则计算来研究各种III-V组单层的电子和铁电性质.
- 分析包括自发偏振,贝里曲率双极和非线性霍尔效应.
主要成果:
- 在Al,In和Ga的AB型单层中预测了室温铁电与As,P或Sb.
- 自发的外平面极化范围从9.48到13.96 pC/m,超过了大多数已知的二维铁电.
- 可调节的贝里曲率双极和非线性霍尔电流被证明,并观察到高效的铁电道交叉点,特别是在InP.
结论:
- 预测的2D铁电单层为电子应用提供了卓越的性能.
- 这些材料对下一代内存设备和铁电和贝里曲率相互作用的基础研究具有前景.
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