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Updated: Jun 24, 2025

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基于热反射的碳化物肖特基屏障二极管的短暂温度测量

Jingxuan Wang1, Lixing Zhou1, Xianwei Meng1

  • 1Institute of Semiconductor Device Reliability Physics, Beijing University of Technology, Beijing 100124, China.

The Review of scientific instruments
|June 3, 2024
PubMed
概括

这项研究引入了一种新型的热反射装置,用于精确的,毫秒级的碳化物 (SiC) 肖特基屏障二极管 (SBD) 中的短暂温度检测. 该设备准确地测量温度变化并确定热阻,改善设备分析.

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