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Updated: Jun 24, 2025

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
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多态,超薄,后端线路兼容的AlScN铁电二极管

Kwan-Ho Kim1, Zirun Han1,2, Yinuo Zhang1

  • 1Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States.

ACS nano
|June 3, 2024
PubMed
概括

使用酸和酸的工程铁电二极管为内存驱动计算提供了更好的性能. 这些缩放的设备显示了增强的开/关比,并使高效,低功耗的嵌入式非挥发性内存.

关键词:
,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,电极二极管是指二极管,它们是指二极管.铁电机电机电机电机电机电机记忆器的使用者非易失性存储器的非易失性存储器

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Schottky Barrier Diode01:27

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Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
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