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Updated: Jun 24, 2025

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
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Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

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基于SnS2量子点的高性能灵活电阻随机访问内存,具有电荷捕获/解锁效应.

Hua An1, Yiyang Li1, Yi Ren1

  • 1State Key Laboratory of Radio Frequency Heterogeneous Integration (Shenzhen University), School of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong, 518060, China. zcpeng@szu.edu.cn.

Nanoscale
|June 4, 2024
PubMed
概括

研究人员使用锡二硫化物量子点开发了灵活的电阻随机访问存储器 (RRAM). 这种高性能设备为先进的电子产品提供了很大的开/关比和很长的保留时间.

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相关概念视频

MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
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