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在MoTe₂中通过聚焦离子束辐射驱动的空间控制相变

Meiling Xiao^1,2, Ziyu Wu^1,2, Guangjian Liu^1,2

¹School of Physics and Materials Science, Nanchang University, Nanchang, Jiangxi 330031, People's Republic of China.

ACS applied materials & interfaces

|June 5, 2024

概括

聚焦离子束辐射可控地将半导体2H二化 (MoTe2) 转化为金属1T类的MoTe2. 这使得纳米级MoTe2同位结的制造成为可能,并将晶体管的性能提高了两倍以上.

科学领域:

材料科学材料科学材料科学
凝聚物质物理学凝聚物质物理学
纳米技术纳米技术

背景情况:

阶段过渡对于为先进的设备应用量身定制二维 (2D) 材料的特性至关重要.
二化 (MoTe2) 呈现出不同的半导体 (2H) 和金属 (1T) 阶段,具有独特的电子特性.

研究的目的:

通过聚焦离子束 (FIB) 辐射,研究在少数层的MoTe2中控制诱导相变的过程.
通过利用这些相位过渡来制造纳米级的平面内异构结构,并提高设备性能.

主要方法:

使用FIB系统,用 (Ga+) 离子对少数层的MoTe2片进行辐射.
利用Te缺陷工程来驱动半导体2H到金属1T相位过渡.
制造子微米1T-2H MoTe2在平面上的同质连接.

主要成果:

通过Ga+离子辐射,证明了可控制的从2H到1T类MoTe2的相变.
成功制造了纳米尺度的1T-2H MoTe2在平面上的同质连接.
通过使用1T类相区作为接触电极,在MoTe2晶体管的启动状态电流中实现了两倍以上的改进.

结论:

聚焦离子束辐射为诱导MoTe2.2中的相变提供了一种新的策略.
能够创建有模式的相位和异质连接的能力提高了基于MoTe2的设备性能.
这项工作扩大了FIB技术在2D材料和设备领域的应用.

关键词:

两维材料是二维材料.缺陷工程是什么?缺陷工程是什么?聚焦的离子束.二甲二甲化物是什么阶段过渡阶段过渡

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