相关实验视频

Updated: Jun 24, 2025

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

基于GaN的低功率JLDG-MOSFET:兴奋剂和门工作功能的影响

Nayeema Hasan¹, Md Rafiqul Islam¹, Md Tanvir Hasan²

¹Department of Electrical and Electronic Engineering, Khulna University of Engineering and Technology (KUET), Khulna, 9203, Bangladesh.

|June 6, 2024

概括

这项研究探讨了化 (GaN) 无连接双门 (JLDG) MOSFET,以提高性能. 优化的兴奋剂和门工作功能显著提高了下一代电子产品的启动电流,并减少了关闭状态电流.

科学领域:

半导体设备物理半导体设备物理
材料科学材料科学材料科学
电气工程电气工程

背景情况:

传统的MOSFET在缩放尺寸方面面临着局限性.
化 (GaN) 为先进的设备提供了卓越的电子性能.
没有交叉点的双门结构 (JLDG) 提供了一条克服扩展挑战的途径.

研究的目的:

为了研究基于GaN的JLDG MOSFET的性能.
为了优化设备参数,如兴奋剂概况 (N_D) 和门工作功能 (Ф).
为了评估尺度设备的优点数字 (FOMs).

主要方法:

使用Silvaco Atlas 2D模拟器进行设备建模.
对短通道JLDG MOSFET的分析模型进行验证.
系统调整兴奋剂度和门工作功能.

主要成果:

达到0.9 mA/μm的最大ON电流 (I_ON) 在N_D = 1 × 10¹⁹ cm^-3的情况下实现.
最低的OFF状态电流 (I_OFF) 为1.24 × 10-16 A/μm,功耗为9.69 × 10-17 W/μm,在F=5.1 eV (Au) 的情况下.
异常开关电流比率 (I_ON/I_OFF) 为 7.56 × 10 ^{12 .}

结论:

GaN JLDG MOSFET在关键性能指标上显示出显著的改进.
优化的兴奋剂和门工作功能对于设备增强至关重要.
这些设备对下一代电子产品中低功耗逻辑切换应用非常有希望.

关键词:

兴奋剂度 (ND) 是指兴奋剂度.在GaN-Wurtzite结构结构中.门的工作功能 (Ф)没有连接的MOSFET.短通道效应是短通道效应.

更多相关视频

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

相关概念视频

MOSFET: Enhancement Mode

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...

MOSFET: Depletion Mode

MOSFET: Depletion Mode

Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...

Characteristics of MOSFET

Characteristics of MOSFET

Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...

MOSFET

MOSFET

The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...

Biasing of FET

Biasing of FET

Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...

Characteristics of JFET

Characteristics of JFET

Junction Field Effect Transistors (JFETs) exhibit specific operational characteristics based on the relationship between the drain current (id) and the drain-source voltage (Vds), along with varying gate-source voltages (Vgs).
The core of a JFET's operation is controlling drain current by modulating the gate-source voltage. When the drain and gate voltage are set to zero, the JFET exhibits no net current flow, representing a state of equilibrium. The drain current increases linearly as the...