使

Renji Bian1,2, Ri He3, Er Pan1

  • 1School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China.

Science (New York, N.Y.)
|June 6, 2024
PubMed
概括

研究人员使用双层3R二硫化物 (3R-MoS2) 开发了一种无疲劳的铁电记忆. 这一突破克服了材料的局限性,为高耐用性非易失性存储器铺平了道路.