Jove
Visualize
联系我们
JoVE
x logofacebook logolinkedin logoyoutube logo
关于 JoVE
概览领导团队博客JoVE 帮助中心
作者
出版流程编辑委员会范围与政策同行评审常见问题投稿
图书馆员
用户评价订阅访问资源图书馆顾问委员会常见问题
研究
JoVE JournalMethods CollectionsJoVE Encyclopedia of Experiments存档
教育
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab Manual教师资源中心教师网站
使用条款与条件
隐私政策
政策

相关概念视频

Ferromagnetism01:31

Ferromagnetism

2.4K
Materials like iron, nickel, and cobalt consist of magnetic domains, within which the magnetic dipoles are arranged parallel to each other. The magnetic dipoles are rigidly aligned in the same direction within a domain by quantum mechanical coupling among the atoms. This coupling is so strong that even thermal agitation at room temperature cannot break it. The result is that each domain has a net dipole moment. However, some materials have weaker coupling, and are ferromagnetic at lower...
2.4K
MOS Capacitor01:25

MOS Capacitor

765
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
765

您也可能阅读

相关文章

通过共同作者、期刊和引用图与本文相关的文章。

排序
Same author

Probing Moiré Excitons in MoSe<sub>2</sub>/WSe<sub>2</sub> Heterobilayers by Combined Micro-photoluminescence and Lateral Force Microscopy.

Nano letters·2026
Same author

High-Chern-number orbital magnetism in twisted rhombohedral graphene.

Nature materials·2026
Same author

Magnon hydrodynamics in an atomically thin ferromagnet.

Science (New York, N.Y.)·2026
Same author

Hybrid ferroelectric-ionic memristive hardware for high scalability in-memory computing.

Nature communications·2026
Same author

Imaging the flat bands of magic-angle graphene reshaped by interactions.

Nature·2026
Same author

Revealing Electron-Electron Interactions in Graphene at Room Temperature with a Quantum Twisting Microscope.

Nano letters·2026

相关实验视频

Updated: Jun 24, 2025

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
10:40

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Published on: April 8, 2018

8.2K

基于滑动铁电的超快高耐久性内存

Kenji Yasuda1,2, Evan Zalys-Geller1, Xirui Wang1

  • 1Department of Physics, Massachusetts Institute of Technology, Cambridge, MA 02138, USA.

Science (New York, N.Y.)
|June 6, 2024
PubMed
概括

我们探索了一种新的铁电场效应晶体管 (FeFET), 这种设备有望为下一代非易失性存储提供快速切换和耐用性.

更多相关视频

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.1K
Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes
08:07

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Published on: March 9, 2019

7.8K

相关实验视频

Last Updated: Jun 24, 2025

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
10:40

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Published on: April 8, 2018

8.2K
In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.1K
Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes
08:07

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Published on: March 9, 2019

7.8K

科学领域:

  • 凝聚物质物理学
  • 材料科学
  • 纳米技术

背景情况:

  • 原子级的电压可切换电子现象对于先进的电子学来说至关重要.
  • 铁电场效应晶体管 (FeFET) 是非挥发性内存的关键.
  • 原子薄的二维 (2D) 铁电材料为小型化提供了新的可能性.

研究的目的:

  • 在双层化物中研究使用滑动铁电的FeFET性能.
  • 评估这种二维铁电材料在电子应用中的潜力.
  • 证明这些装置在室温下工作.

主要方法:

  • 使用单层石墨烯通道制造FeFET装置.
  • 使用具有滑动铁电性的双层化物.
  • 设备性能的描述,包括切换速度和耐久性.

主要成果:

  • FeFET在纳秒尺度上显示了超快的切换速度.
  • 该装置具有超过10^11个开关周期的高耐久性.
  • 性能与最先进的FeFET设备相美.

结论:

  • 2D滑动铁电器为下一代非易失性记忆提供了一个有希望的途径.
  • 研究的FeFET显示了面积和能源效率高的电子设备的潜力.
  • 滑动铁电FeFET的室温操作是可行的和有效的.