具有MoC/碳纳米复合物的自承载多孔木炭电极,用于应用在高性能超级电容器中
Mengyao Li1, Lixin Wang1, Wanning Xiong1
1Hunan Province Key Laboratory of Materials Surface & Interface Science and Technology, College of Science, Central South University of Forestry and Technology, Changsha, Hunan 410004, PR China.
Journal of colloid and interface science
|June 7, 2024
概括
研究人员开发了一种新的方法,为高性能超级电容器 (SC) 创建先进的碳纳米. 这种方法使用多孔碳化木材和碳化来增强储能能力,提供了一个有前途的木基电极解决方案.
科学领域:
- 材料科学 材料科学 材料科学
- 电化学 电化学 电化学
- 纳米技术 纳米技术
背景情况:
- 为高性能超级电容器 (SC) 设计复杂的多孔碳纳米仍然具有挑战性.
- 在SC中电极的性能严重依赖于材料组成和制造技术.
研究的目的:
- 开发一种有效的现场合成方法,用于用于超级电容器的多孔碳化木材上的碳纳米嵌入的碳化物.
- 研究新型MoC/CN@PCW复合电极和对称超级电容器的电化学性能.
主要方法:
- 在多孔碳化木材上在现场合成化伊米达酸框架-8 (ZIF-8),使用六碳烯作为结构保护.
- ZIF-8前体的热解形成嵌入碳纳米 (CN) 中的小尺寸碳化物 (MoC).
- 制造和电化学测试MoC/CN@PCW复合电极和对称超级电容器.
主要成果:
- 该MoC/CN@PCW复合电极在5 mA cm−2时显示出高面积特异性电容9.7 F cm−2和30 mA cm−2.4时显示出9.4 F cm−2的电容.
- 对称的超级电容器在5 mA cm-2时实现了2.7 F cm-2的面积特异电容,具有出色的电容保留 (98.5%在12000个循环后).
- 超级电容器的功率密度为6.5 mW cm−2和能量密度为0.864 mWh cm−2.2.
结论:
- 开发的方法提供了一种通用和高效的方法,用于创建用于储能的先进碳纳米.
- 与MoC/CN集成的木基电极显示出下一代超级电容器的巨大潜力.
- 结构完整性保护策略是实现高性能复合材料的关键.
更多相关视频
08:59Synthesizing a Gel Polymer Electrolyte for Supercapacitors, Assembling a Supercapacitor Using a Coin Cell, and Measuring Gel Electrolyte Performance
Published on: November 30, 2022
4.5K
06:53Author Spotlight: Magnetometric Characterization of Intermediates in the Solid-State Electrochemistry of Redox-Active Metal-Organic Frameworks
Published on: June 9, 2023
2.0K
相关概念视频
Capacitor With A Dielectric
Parallel plate capacitors consist of two conducting plates separated by a certain distance. However, it is mechanically difficult to hold the large plates parallel to each other without actual contact. Hence, a dielectric layer is commonly placed between the plates, which provides an easy solution for holding the plates together with a small gap and increases the capacitance of the capacitor.
Dielectrics are non-conducting materials with no free or loosely bound electrons. When a dielectric is...
Dielectrics are non-conducting materials with no free or loosely bound electrons. When a dielectric is...
MOS Capacitor
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
