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Updated: Jun 24, 2025

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
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Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

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在MoSe_{2}/hBN/MoSe_{2}异构结构中,电气控制和紧密结合的间层激发子的运输

Lifu Zhang1, Liuxin Gu1, Ruihao Ni1

  • 1Department of Materials Science and Engineering, University of Maryland, College Park, Maryland 20742, USA.

Physical review letters
|June 10, 2024
PubMed
概括

我们报告了MoSe2/hBN/MoSe2异构结构中动量直接层间激子的形成. 这些激子表现出可调节的特性和远程传输,为量子物理学探索和光电子设备铺平了道路.

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