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Updated: Jun 22, 2026

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
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Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Published on: November 28, 2017

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在大面积的二维MoS2中提高了应变转移效率,通过金辅助脱皮获得

Álvaro Rodríguez1, Onur Çakıroğlu1, Hao Li1

  • 1Materials Science Factory, Instituto de Ciencia de Materiales de Madrid (ICMM)-Consejo Superior de Investigaciones Científicas (CSIC), C. Sor Juana Inés de la Cruz, 3, 28049 Madrid, Spain.

The journal of physical chemistry letters
|June 10, 2024
PubMed
概括

研究人员开发了一种新的方法来应变工程二维 (2D) 材料,如二硫化物 (MoS2). 这种在柔性基板上进行的黄金辅助脱皮可以改善应变传递,并减少层滑动,从而增强光电子性能.

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相关概念视频

MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...