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表面正常照明的伪平面Ge-on-Si雪崩光二极管具有高增益和低噪声

Fiona Fleming, Xin Yi, Muhammad M A Mirza

|June 11, 2024

概括

研究人员开发了一种新的germanium-on-silicon雪崩光二极管 (APD),用于敏感的光检测. 该设备实现了创纪录的低噪声,使得光子学中的高性能应用成为可能.

科学领域:

光电学是指光电子产品.
半导体设备半导体设备

背景情况:

在 (Ge-on-Si) 雪崩光二极管 (APD) 对于低强度光检测至关重要.
传统设计在生长厚厚的 (Ge) 吸收层方面面临挑战,通常需要波导配置.

研究的目的:

为了引入一种新的垂直照明,伪平面的Ge-on-Si APD设计.
克服现有的Ge-on-Si APD架构的局限性,以提高性能.

主要方法:

伪平面Ge-on-Si APD的制造,具有2微米的Ge吸收器和1.4微米的Si乘积区域.
设备性能的表征,包括响应能力,雪崩增益和1550 nm的过度噪声因子.

主要成果:

在Ge-on-Si APD中,在单位增益时的响应率为0.41A/W.
实现了101的最大雪崩增强,在20的增强下创下了3.1的创纪录的低超额噪声系数.
对于直径为50微米的设备,设备的性能在波长为1550纳米的波长下进行了评估.

结论:

新的垂直照明的Ge-on-Si APD设计在低噪音,高增益光检测方面取得了重大进展.
该设备具有具有成本效益的制造和集成到光子平台的潜力,使其适用于各种高灵敏度应用.
在Ge-on-Si APD技术的这一突破为1550 nm周围改进的光学传感解决方案铺平了道路.

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