半导体的宽范围电阻特征用太赫兹时域光谱法对半导体进行宽范围电阻特征
Optics express
|June 11, 2024
概括
太赫兹时域光谱 (THz-TDS) 为测量电阻提供了一种非破坏性的方法. 两个德鲁德模型方法成功提取了电阻,匹配了四点探测结果.
科学领域:
- 半导体物理 半导体物理
- 材料科学 材料科学 材料科学
- 频谱学是一种光谱学.
背景情况:
- 电阻是半导体的一个关键性质,通常通过四点探测方法进行破坏性测量.
- 太赫兹时域光谱 (THz-TDS) 是一种快速,非破坏性的技术,用于介电特性.
研究的目的:
- 证明THz-TDS在广泛范围内非破坏性测量电阻的潜力.
- 为了比较分析和优化,使用THz-TDS.TDS进行电阻提取的德鲁德模型方法.
- 通过X-Y扫描来研究空间电阻分布和兴奋剂异质性.
主要方法:
- 太赫兹时域光谱法 (THz-TDS) 对样本的测量.
- 应用基于德鲁德模型的两种方法:分析和优化.
- 使用常规的四点探测方法进行参考测量.
- 样品的X-Y扫描绘制空间电阻分布的地图.
主要成果:
- 通过使用THz-TDS.成功提取了从10−3到102 Ωcm的电阻值.
- 分析和优化方法都与四点探测器测量结果保持良好一致.
- 空间映射显示了兴奋剂分配中的不均性.
结论:
- THz-TDS与德鲁德建模相结合,为电阻特性提供了一个可行的非破坏性替代方案.
- 开发的方法允许准确的电阻测量和空间变化的映射.
- 这种技术对半导体行业的质量控制和工艺监控具有前景.
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