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原子进化机制和抑制在化物中边缘线程失位的机制远程异质位

Bo Shi^1,2, Zhetong Liu³, Yang Li^1,2

¹Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.

|June 11, 2024

概括

减少化物涂层器的边缘线程位移 (TD) 对设备性能至关重要. 用石墨烯辅助的远程异质显著降低了边缘TD密度,通过启用新的应变放松通路.

科学领域:

材料科学材料科学材料科学
固态物理固态物理
半导体设备半导体设备

背景情况:

边缘线程位移 (TD) 是化物皮层的首要限制,降低了设备的性能.
由于化物材料的滑动系统有限,减少边缘TDs具有挑战性.

研究的目的:

为了研究化皮层中边缘TDs的形成机制.
开发一种新的策略,以显著减少边缘TD密度.

主要方法:

系统地调查边缘TD形成机制.
应用石墨烯辅助远程异质化.
分析界面能量障碍的第一原则计算.

主要成果:

由凝聚边界和接口不合适位移产生的识别的边缘TDs.
通过使用石墨烯辅助远程异质化,将边缘TD密度减少了近一个数量级.
第一原则计算证实了使用石墨烯的界面滑动减少了能量障碍.

结论:

石墨烯插入提供了一个新的应变释放通道,抑制源头的边缘TD形成.
这种方法提供了一种直接的方法来降低边缘TD密度,提高光电子和电子设备的性能.

关键词:

边缘线程变位位移边缘线程变位石墨烯是一种石墨烯.化物薄膜是一种化物薄膜.远程的异质性皮质化 (heteroepitaxy) 是一个很大的问题.自发的应力放松放松.

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