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Updated: Jun 24, 2025

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

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使用基于Mo-MXene/Mo-金属硫化物的半导体连接和Schottky连接构建内置电场,用于电磁响应

Xiaojun Zeng1, Xiao Jiang2, Ya Ning2

  • 1School of Materials Science and Engineering, Jingdezhen Ceramic University, Jingdezhen, 333403, People's Republic of China. zengxiaojun@jcu.edu.cn.

Nano-micro letters
|June 11, 2024
PubMed
概括

研究人员开发了一种新的Mo-MXene/Mo-金属硫化物异构结构,用于先进的电磁波 (EMW) 吸收. 该系统显著提高了EMW吸收,为军事隐形应用提供了潜在的潜力.

关键词:
内置的电场内置的电场电磁波吸收方式 电磁波吸收方式在MottSchottky十字路口.半导体的连接点是半导体的连接点.半导体 半导体 金属异构结构

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