通过界面氧化调制,在化Ta/CoFeB/HfO异构中控制旋转轨道扭矩的电场
Shuo Wu1, Tianli Jin1, Calvin Ching Ian Ang1
1School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore.
Nanotechnology
|June 11, 2024
概括
我们通过通过和电场控制界面氧化,优化了旋转轨道扭矩 (SOT) 在旋转器件中的效率. 这项研究证明了80%的无磁场磁化切换比率,为先进的设备应用铺平了道路.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 纳米技术纳米技术
背景情况:
- 旋转轨道扭矩 (SOT) 对于旋转器件至关重要,使其能够有效地操纵磁化.
- 接口特性显著影响SOT效率,使接口工程成为一个关键的研究领域.
- 电场控制在先进的自旋电子应用中为动态SOT调制提供了一个有希望的途径.
研究的目的:
- 研究电场和界面氧化对SOT效率的影响.
- 探索热温度在优化Ta/CoFeB/HfO异构中SOT性能方面的作用.
- 通过电场驱动的离子迁移证明SOT效率的可逆,双极和非挥发性调制.
主要方法:
- /CoFeB/HfO异构结构的制造和回火.
- 通过变化的回火温度来描述SOT效率.
- 应用电场来诱导和调节氧离子在CoFeB/HfO接口上的迁移.
主要成果:
- SOT的效率在320°C回火时达到顶峰,实现了80%的无磁场磁化切换比率.
- 在CoFeB/HfO接口的化诱导的氧离子迁移被确定为SOT增强的机制.
- 电场应用导致SOT效率的可逆,双极和非挥发性调制.
结论:
- 通过和电场的接口调制有效地控制了Ta/CoFeB/HfO异构中的SOT效率.
- 氧离子迁移是提高和调整SOT性能的一个关键因素.
- 这项研究提供了一个可行的战略,用于优化和控制SOT在下一代自旋电子设备.
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