一个反铁磁旋转相变记忆的反铁磁旋转相变记忆
Han Yan1, Hongye Mao1, Peixin Qin2
1School of Materials Science and Engineering, Beihang University, Beijing, 100191, China.
Nature communications
|June 11, 2024
概括
研究人员开发了一种新的抗铁磁性记忆装置,使用Mn-Ir薄膜的旋转相变. 与传统方法相比,这种新型内存在室温下提供了显著更大的电阻调制.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 这就是Spintronics.
背景情况:
- 抗铁磁性内存设备通常在室温下由于异性磁阻效应而表现出小的电输出.
- 现有技术需要在信号大小和稳定性方面进行显著改进.
研究的目的:
- 开发一种新型的抗铁磁性记忆装置,具有增强的室温电阻调制.
- 探索用于记忆应用的二元金属间薄膜中自旋相变的潜力.
主要方法:
- 研究了Mn-Ir二进制金属间薄膜在它的直线和非直线相界.
- 使用压电应变以可逆地相互转换旋转结构.
- 在各种条件下测量电阻调制和设备稳定性.
主要成果:
- 取得了很大的非易失性室温电阻调制,比异性磁阻效应大两倍.
- 通过压电应变证明可逆自旋结构的相互转换.
- 观察到显著的时间和温度稳定性,以及在高磁场 (高达60 T) 中的强度.
结论:
- 开发的抗铁磁旋转相变存储器为现有技术提供了一个有希望的替代方案.
- 这个设备模仿相位变换内存使用量子自旋自由度,为下一代内存设备铺平了道路.
- 该材料的稳定性和大信号输出使其适用于实际应用.
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