电子带结构和HgPS3晶体和层的光学特性
Beatriz de Simoni1, Miłosz Rybak1, Nikolas Antonatos1,2
1Department of Semiconductor Materials Engineering, Wroclaw University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland.
概括
硫酸 (HgPS3) 晶体表现出2.68 eV的间接带隙. 稀薄的HgPS3层改变了带隙,而缺陷辐射则主导了光发光.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 固态化学 固态化学
背景情况:
- 过渡金属硫酸盐 (MPS3) 以其分层结构和磁性特性而闻名.
- 二酸 (HgPS3) 具有独特的三临床晶体结构和显著的质量,使其对基本性质研究有趣.
研究的目的:
- 研究HgPS3晶体和脱皮层的电子带结构和光学特性.
- 了解晶体厚度对HgPS3.3电子和光学特性的影响.
主要方法:
- 实验技术:吸收,反射和光发光的测量.
- 理论计算:电子带结构分析.
- 材料表征:扫描电子显微镜 (SEM) 和机械剥皮.
主要成果:
- 大量HgPS3在室温下表现出2.68 eV的间接带隙,直接间隙高出~50 meV.
- 由于振荡器强度的增加,在反射频谱中观察到带边附近的直接光学转换.
- 光发光谱以缺陷相关的辐射为主,这是由于间接的带隙和选择规则.
- 将晶体厚度降低到双层,导致直接的带隙,而单层仍然是间接的.
结论:
- HgPS3具有独特的电子和光学特性,受其晶体结构和厚度的影响.
- 间接的带隙和选择规则在批量HgPS3上限制了近带隙的排放.
- 层薄化显著改变了带结构,为可调节的光电子特性提供了潜在的可能性.
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