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Time-Domain Interpretation of PD Control01:07

Time-Domain Interpretation of PD Control

92
Proportional-Derivative (PD) control is a widely used control method in various engineering systems to enhance stability and performance. In a system with only proportional control, common issues include high maximum overshoot and oscillation, observed in both the error signal and its rate of change. This behavior can be divided into three distinct phases: initial overshoot, subsequent undershoot, and gradual stabilization.
Consider the example of control of motor torque. Initially, a positive...
92
Node Analysis for AC Circuits01:14

Node Analysis for AC Circuits

316
Consider an angioplasty system featuring a catheter equipped with a turbine, a critical tool for removing plaque deposits from coronary arteries. This intricate medical device operates using a circuit model reminiscent of a dual-node RLC circuit powered by a current-controlled voltage source.
To unravel the complexities of this system, nodal analysis is employed, a powerful technique founded on Kirchhoff's current law (KCL), which remains valid for phasors. AC circuits can effectively be...
316
Series R—L Circuit Transients01:22

Series R—L Circuit Transients

96
In a series resistor-inductor (R-L) circuit, closing the switch at the start of the time period simulates a three-phase short circuit, a fault condition where all three phases of an unloaded synchronous machine are short-circuited. When there is no fault impedance and no initial current, the initial voltage is determined by the phase angle of the source voltage.
Using Kirchhoff's Voltage Law (KVL) to analyze this circuit helps determine the total asymmetrical fault current, which consists...
96
Biasing of FET01:22

Biasing of FET

259
Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
259
Small-Signal Analysis of MOSFET Amplifiers01:23

Small-Signal Analysis of MOSFET Amplifiers

543
In small-signal analysis, a MOSFET transistor amplifier acts as a linear amplifier when operating in its saturation region. The gate-to-source voltage (VGS) of the MOSFET is the sum of the DC biasing voltage and the small time-varying input signal. This combination sets up the operating point and modulates the drain current (ID) that flows from the drain to the source. When a small AC signal is superimposed on the DC bias voltage at the gate, the instantaneous drain current comprises three...
543
Current Growth And Decay In RL Circuits01:30

Current Growth And Decay In RL Circuits

3.8K
The current growth and decay in RL circuits can be understood by considering a series RL circuit consisting of a resistor, an inductor, a constant source of emf, and two switches. When the first switch is closed, the circuit is equivalent to a single-loop circuit consisting of a resistor and an inductor connected to a source of emf. In this case, the source of emf produces a current in the circuit. If there were no self-inductance in the circuit, the current would rise immediately to a steady...
3.8K

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相关实验视频

Updated: Jun 24, 2025

Real-Time Proxy-Control of Re-Parameterized Peripheral Signals using a Close-Loop Interface
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分析和控制RRAM超标电流的分析和控制

Pragya R Shrestha1, David M Nminibapiel2, Jason P Campbell3

  • 1Theiss Research, La Jolla, CA USA and the Engineering Physics Division of the NIST, Gaithersburg, MD 20899 USA.

IEEE transactions on electron devices
|June 13, 2024
PubMed
概括

在RRAM形成时,电流超标是不可避免的,但它的峰值与寄生电容无关. 然而,超越持续时间对于控制RRAM形成至关重要,特别是在超短脉冲的情况下.

关键词:
目前的超额冲击.电阻随机访问存储器 (RRAM) 是一种电阻式随机访问存储器.形成 形成 形成 形成切换变量的切换变化.

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Identification and Quantification of Decomposition Mechanisms in Lithium-Ion Batteries; Input to Heat Flow Simulation for Modeling Thermal Runaway
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科学领域:

  • 材料科学 材料科学 材料科学
  • 电气工程 电气工程
  • 半导体设备物理 半导体设备物理

背景情况:

  • 电阻随机访问存储器 (RRAM) 呈现出显著的变化,通常在形成过程中由当前的合规元素来解决.
  • 在RRAM形成过程中,无论合规 (1R-1R,1T-1R) 是否,电流超标是一个已知的现象.
  • 峰值超越电流通常与灯丝特性和寄生电容有关.

研究的目的:

  • 为了研究在RRAM形成过程中寄生电容和电流超标之间的关系.
  • 澄清超越电流特征在超短脉冲形成成功中的作用.
  • 挑战对峰值超标电流作为预测指标的传统理解.

主要方法:

  • 对1R-1R和1T-1R结构的详细电路分析.
  • 在RRAM测试结构上进行实验测量.
  • 超短脉冲形成与传统方法的比较.

主要成果:

  • 峰值超越电流独立于寄生电容.
  • 电流超标的持续时间强烈依赖于寄生电容.
  • 超短脉冲形成实现了控制,因为超速持续时间小于脉冲持续时间.

结论:

  • 寄生电容不会影响RRAM形成中的峰值超越电流.
  • 超越持续时间是控制RRAM形成的关键参数,特别是在超短脉冲的情况下.
  • 超短脉冲形成的成功是通过控制超越持续时间来解释的.