短二共价键使得直接4f-4f合双核单分子磁铁的高磁化阻断温度
Jinpeng Xin1, Ziqi Hu1, Yang-Rong Yao1
1Key Laboratory of Precision and Intelligent Chemistry, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), Department of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026, China.
研究人员合成了一种Dy2@C82内体金属烯,具有短Dy(II) -Dy(II) 键. 这种结构抑制了磁化的量子道化 (QTM),导致单分子磁体的高阻塞温度.
科学领域:
- 超分子化学
- 磁性
- 纳米技术
背景情况:
- 化物离子的直接共价合是高性能单分子磁铁 (SMM) 的关键.
- 现有的方法由于较大的键距离和电子屏蔽,导致了较弱的兰化物-兰化物合.
- 抑制磁化量子道化 (QTM) 对于提高SMM工作温度至关重要.
研究的目的:
- 在一个封闭的环境中合成一种新的Dy(II) -Dy(II) 单键.
- 调查短,直接的Dy-Dy共价键对磁性质的影响.
- 通过抑制QTM来提高单分子磁铁的性能.
主要方法:
- 固体金属烯Dy2@C82的合成
- Dy(II) -Dy(II) 键的长度 (3.61 Å) 的表征.
- 磁性测量以确定磁化阻断温度和QTM抑制.
主要成果:
- 在碳中第一次合成短Dy (II) -Dy (II) 单键.
- 强大的Dy-Dy反铁磁合的观察.
- 在零磁场下有效灭QTM.
- 观察到高达25K的磁性歇斯底里.
- 高 100 秒的磁化阻断温度 (TB,100s) 为 27.2 K.
结论:
- 在内体金属中直接,短的Dy-Dy共价键对SMM是可行的和有益的.
- 这种方法有效地抑制QTM,显著增加阻塞温度.
- Dy2@C82是开发高性能分子磁铁的有希望的平台.
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