GeTe/MoTe2范德瓦尔斯异构结构:为非易失性记忆和神经形态计算应用启用超低压记忆器
Atul C Khot1, Kiran A Nirmal1, Tukaram D Dongale2
1School of Electrical Engineering, Korea University, Anam-ro 145, Seongbuk-gu, Seoul, 02841, Republic of Korea.
Small (Weinheim an der Bergstrasse, Germany)
|June 14, 2024
概括
GeTe/MoTe2异构结构显示出下一代电子产品的前景. 这些半导体设备表现出高效的memristor行为,用于非挥发性内存和神经形态计算,使用最小的能量.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 纳米电子学纳米电子学
背景情况:
- 先进的电子半导体范德瓦尔斯异构结构 (HSs) 为下一代纳米电子提供了独特的特性.
- 探索新的异构结构对于推进记忆和计算技术至关重要.
研究的目的:
- 研究GeTe/MoTe2异构结构用于非易失性记忆和神经形态计算应用.
- 为了制造和描述Ag/GeTe/MoTe2/Pt HS交点设备的记忆性.
主要方法:
- 使用喷雾制造的Ag/GeTe/MoTe2/Pt HS交点装置的制造.
- 描述memristor的行为,包括切换电压,能源消耗,保留和耐力.
- 使用横截面传输电子显微镜和导电原子力显微镜进行分析.
- 模拟突触功能和实施多层感知器.
主要成果:
- 设备在超低开关电压 (VSET:0.15V,VRESET: -0.14V) 及低能耗 (≈30nJ) 的情况下显示了memristor行为.
- 实现了高记忆窗口,长保留时间 (10^4秒) 和优秀的耐力 (10^5周期).
- 通过TEM和C-AFM确认了导电丝的形成.
- 成功模拟了突触功能,并在多层感知器中实现了81.3%的模式精度.
结论:
- GeTe/MoTe2 HS在非易失性记忆和神经形态计算方面表现出色.
- 这些设备为节能,高密度内存和人工智能应用提供了潜在的解决方案.
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