多配置对应在 DFT + U 成本:现场电子电子相互作用产生一个区块局部化配置相互作用哈密尔顿式
1Department of Chemistry & Biochemistry, Texas Christian University, Fort Worth, Texas 76129, United States.
The journal of physical chemistry. A
|June 15, 2024
概括
这项研究引入了一种新的波函数-密度函数理论 (DFT) + U方法. 它实现了电子相关的高精度,计算成本与标准DFT+U相似,推进了电子结构计算.
科学领域:
- 计算化学是一种计算化学.
- 量子力学就是量子力学.
- 材料科学 是一种材料科学.
背景情况:
- 标准密度函数理论 (DFT) 与电子相关性作斗争.
- DFT+U方法可以改进计算,但有其局限性.
- 精确处理电子相关性对于预测材料性质至关重要.
研究的目的:
- 使用哈巴德模型开发一种第一原则的波函数-在-DFT方法.
- 为了将电子-电子相互作用投射到DFT内的原子状态中.
- 以可管理的计算成本实现准确的相关性能量.
主要方法:
- 使用哈巴德密度函数理论 (DFT) + U框架.
- 介绍了投射到 DFT+U 原子状态上的电子-电子相互作用.
- 采用配置交互的哈密尔顿区块,局部化为原子状态,通过占用数和自我能量 (哈伯德U值) 表示.
主要成果:
- 通过推广能量的近似来证明准确的多配置相关性能量.
- 为各种系统实现超出零和的准确性,包括小数电子占用,二元和解离键.
- 保持与标准DFT+U相比的计算成本.
结论:
- 开发的DFT+U中的波函数方法比标准方法提供了显著的改进.
- 它在没有复杂的轨道定位的情况下提供准确的相关能量.
- 在电子结构计算中,这种方法对于复杂的系统和大型活动空间是有效的.
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