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Updated: Jun 23, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
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Published on: May 13, 2020

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控制的界面电阻切换在薄膜氧化物中用于神经形态应用

Benedetta Gaggio1, Atif Jan1, Moritz Muller1

  • 1Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, U.K.

Chemistry of materials : a publication of the American Chemical Society
|June 17, 2024
PubMed
概括

这项研究介绍了一种生物相容的设备,该设备展示了由控制的电阻切换和神经形态功能. 材料接口允许离子转移,使智能可穿戴设备的低功耗电子设备成为可能.

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相关概念视频

MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
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