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Updated: Jun 23, 2025

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基于低维材料的小型特征尺寸晶体管:从结构设计到纳米制造技术

Xiaqing Fu1, Zhifang Liu2, Huaipeng Wang3

  • 1School of Microelectronics, Shanghai University, Shanghai, 201800, P. R. China.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)
|June 17, 2024
PubMed
概括

研究人员正在探索低维材料,以克服收缩晶体管的挑战,专注于设备设计和制造更小,高性能组件. 本综述强调了纳米晶体管技术的进展和未来方向.

关键词:
纳米制造的纳米制造在纳米门晶体管中.小型特征大小的晶体管.垂直晶体管 垂直晶体管

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Field Effect Transistor01:29

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Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
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