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Updated: Jun 29, 2026

Analysis of Contact Interfaces for Single GaN Nanowire Devices
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Analysis of Contact Interfaces for Single GaN Nanowire Devices

Published on: November 15, 2013

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详细研究了纳米管的电子和光学特性

Hsin-Yi Liu1, Yu-Huang Chiu1, Jhao-Ying Wu2

  • 1Department of Applied Physics, National Pingtung University, Pingtung, Taiwan.

Physical chemistry chemical physics : PCCP
|June 17, 2024
PubMed
概括

德纳米管 (GeNTs) 具有可调节的电子和光学特性. 第一原理计算揭示了金属和半导体的行为取决于结构和直径,为纳米技术开辟了道路.

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Resonance Raman Spectroscopy of Extreme Nanowires and Other 1D Systems07:44

Resonance Raman Spectroscopy of Extreme Nanowires and Other 1D Systems

Published on: April 28, 2016

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Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon06:57

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

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相关概念视频

Overview of Electron Microscopy01:25

Overview of Electron Microscopy

The wavelengths of visible light ultimately limit the maximum theoretical resolution of images created by light microscopes. Most light microscopes can only magnify 1000X, and a few can magnify up to 1500X. Electrons, like electromagnetic radiation, can behave like waves, but with wavelengths of 0.005 nm, they produce significantly greater resolution up to 0.05 nm as compared to 500 nm for visible light. An electron microscope (EM) can create a sharp image that is magnified up to 2,000,000X.