二维多铁RuClF/AgBiP2S6范德瓦尔斯的异构结构具有谷间分裂特性和可控制的磁性异构性
Ziyu Liu1, Baozeng Zhou1, Xiaocha Wang1
1Tianjin Key Laboratory of Film Electronic & Communicate Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China. wangxc@email.tjut.edu.cn.
Physical chemistry chemical physics : PCCP
|June 18, 2024
概括
本研究探讨了新的二维 (2D) 多铁体异构结构,揭示了铁磁半导体特性和垂直磁性异构性. 这些发现对于开发先进的valleytronic设备至关重要.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 材料科学 材料科学 材料科学
- 这就是Spintronics.
背景情况:
- 对于先进的电子应用来说,研究二维 (2D) 多铁体异构结构中的新特性是非常重要的.
- 了解电子和磁性行为是设计下一代设备的关键.
研究的目的:
- 系统地研究2D多铁 RuClF/AgBiP2S6 范德瓦尔斯 (vdW) 异构结构的电子特性和磁性异构能量 (MAE).
- 探索双轴应变对山谷分裂和MAE的影响.
- 评估谷区分裂现象的非挥发性电气控制潜力.
主要方法:
- 使用了基于密度函数理论 (DFT) 的第一原则计算.
- 哈伯德在场的库伦参数 (U) 用于Ru原子被用来解释电子相关性.
- 分析包括带结构,山谷极化,旋转轨道合 (SOC) 和在不同双轴应变下磁性异性质能量.
主要成果:
- RuClF/AgBiP2S6异构结构具有稳定的铁磁半导体特性,具有垂直磁性异构性 (PMA).
- 由于SOC,观察到谷地极化,具有显著的谷地分裂能量 (279 meV和263 meV).
- 双轴应变调节谷间分裂和MAE;可以调整PMA,其中一个配置保持PMA跨应变,而另一个配置转换为平面内磁性异构性 (IMA).
结论:
- RuClF/AgBiP2S6的异构结构显示出对旋转电子和山谷电子应用有前途的特性.
- 可调节谷的分裂和通过应变的磁性异构性为非挥发性电气控制提供了途径.
- 这项研究对开发先进的valleytronic设备具有重要的理论意义.
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